Dislocation-Free Strained Silicon-on-Silicon by In-Place Bonding

Copyright © (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

In-place bonding is a technique where silicon-on-insulator (SOI) slabs are bonded by hydrophobic attraction to the underlying silicon substrate when the buried oxide is undercut in dilute HF. The bonding between the exposed surfaces of the SOI slab and the substrate propagates simultaneously with the buried oxide etching. As a result the slabs maintain their registration and are referred to as “bonded in-place”. We report the fabrication of dislocation-free strained silicon slabs from pseudomorphic tri-layer Si/SiGe/SOI by in-place bonding. Removal of the buried oxide allows the compressively strained SiGe film to relax elastically and induce tensile strain in the top and bottom silicon films. The slabs remain bonded to the substrate by van der Waals forces when the wafer is dried. Subsequent annealing forms a covalent bond such that when the upper Si and the SiGe layer are removed, the bonded silicon slab remains strained.

By: G. M. Cohen; P. M. Mooney; V. K. Paruchuri; H. J. Hovel

Published in: Applied Physics Letters, volume 86, (no 25), pages 251902-1-3 in 2005


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