Copyright © (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics
Carbon doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by PECVD from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, FTIR and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal insulator silicon structures. By proper choice of the precursor and deposition condi-tions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD prepared carbon doped oxides as the interconnect dielectrics for future generation of VLSI chips.
By: Alfred Grill, Vishnubhai Patel
Published in: Applied Physics Letters, volume 79, (no 6), pages 803-5 in 2001
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